S9015 Datasheet, PDF (2/2 Pages) Weitron Technology – PNP General Purpose Transistors

Elektronische Bauelemente
S9015
PNP Silicon
Low Frequency, Low Noise Amplifier
Typical Characteristics
-50
I
B
=
-400µA
-40
I
B
=
-350µA
I
B
=
-300µA
-30
I_B = -250µA
I_B = -200µA
-20
I_B = -150µA
I
B
=
-100µA
-10
I_B = -50µA
-0
-0
-2
-4
-6
-8 -10 -12 -14 -16 -18 -20
V [V], COLLECTOR-EMITTER VOLTAGE
CE
Figure 1. Static Characteristic
-1000
V (sat)
BE
-100
V (sat)
CE
I = 20 I
C
B
-10
-0.1
-1
-10
-100
I [mA], COLLECTOR CURRENT
C
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
f = 1 MHz
I_E = 0
10
-1000
-100
VCE = -5V
-10
-0.1
-1
-10
-100
IC [mA], COLLECTOR CURRENT
-1000
Figure 2. DC current Gain
-100
VCE = -5V
-10
-1
-0.1
-0.0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
VBE [V], BASE-EMITTER VOLTAGE
Figure 4. Base-Emitter On Voltage
1000
VCE = -6V
100
1
-1
-10
-100
V [V], COLLECTOR-BASE VOLTAGE
CB
Figure 5. Collector Output Capacitance
http://www.SeCoSGmbH.com
01-Jun-2004 Rev. B
10
-1
-10
IC [mA], COLLECTOR CURRENT
Figure 6. Current Gian Bandwidth Product
Any changing of specification will not be informed individual
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