S9013T Datasheet, PDF (2/2 Pages) SeCoS Halbleitertechnologie GmbH – NPN Epitaxial Silicon Transistor

Elektronische Bauelemente
S9013T
NPN Epitaxial Silicon Transistor
Typical Characteristics
20
18
I
B
=
160μA
I
B
=
140μA
16
I
B
=
120μA
14
I
B
=
100μA
12
10
I
B
=
80μA
8
I
B
=
60μA
6
I
B
=
40μA
4
2
I
B
=
20μA
0
0
10
20
30
40
50
V_CE [V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
10000
I_C = 10 I_B
1000
V (sat)
BE
100
V_CE (sat)
10
1
10
100
1000
10000
I [mA], COLLECTOR CURRENT
C
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
1000
100
VCE = 1V
10
1
1
10
100
1000
10000
IC [mA], COLLECTOR CURRENT
Figure 2. DC current Gain
1000
100
VCE = 6V
10
1
1
10
100
1000
10000
IC [mA], COLLECTOR CURRENT
Figure 4. Current Gain Bandwidth Product
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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