S9012T_15 Datasheet, PDF (2/2 Pages) SeCoS Halbleitertechnologie GmbH – PNP Epitaxial Silicon Transistor

Elektronische Bauelemente
S9012T
PNP Epitaxial Silicon Transistor
Typical Characteristics
-50
I_B=-300μA
I_B=-250μA
-40
I_B=-200μA
-30
I_B=-150μA
-20
I_B=-100μA
I_B=-50μA
-10
-0
-0
-10
-20
-30
-40
-50
V_CE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
-1000
VBE(sat)
-100
VCE(sat)
-10
-10
IC=10IB
-100
-1000
IC[mA], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
1000
100
VCE = -1V
10
-10
-100
IC[mA], COLLECTOR CURRENT
-1000
Figure 2. DC current Gain
1000
100
VCE=-6V
10
1
-1
-10
-100
-1000
-10000
IC[mA], COLLECTOR CURRENT
Figure 4. Current Gain Bandwidth Product
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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