S2N7002W Datasheet, PDF (2/3 Pages) SeCoS Halbleitertechnologie GmbH – N-Ch Small Signal MOSFET

Elektronische Bauelemente
S2N7002W
115 mA, 60 V, R_DS(ON) = 7.5 Ω
N-Ch Small Signal MOSFET
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain ^{TJ =25°C}
Current
T_J =125°C
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V_(BR)DSS
60
-
-
-
- 1.0
I_DSS
-
- 500
I_GSSF
-
- 100
I_GSSR
-
- -100
ON CHARACTERISTICS¹
Vdc V_GS = 0, I_D = 10µAdc
µAdc V_GS=0, V_DS = 60Vdc
nAdc V_GS=20Vdc
nAdc V_GS=-20Vdc
Gate Threshold Voltage
V_GS(th)
1.0 1.6 2.5 Vdc V_DS = V_GS, I_D =250µAdc
On-State Drain Current
I_D(ON)
500
-
-
mA V_DS≧2.0V_DS(ON),V_GS=10Vdc
-
Static Drain-Source On-State Voltage V_DS(ON)
-
- 3.75
V_GS=10Vdc, I_D =500mAdc
Vdc
- 0.375
V_GS=5Vdc, I_D =50mAdc
Static Drain-Source On-State
Resistance (T_A=25°C)
r_DS(ON)
-
1.4 7.5
Ω ^{VGS=10Vdc, ID =500mAdc}
- 1.8 7.5
V_GS=5Vdc, I_D =50mAdc
Static Drain-Source On-State
Resistance (T_A=125°C)
r_DS(ON)
-
-
13.5
Ω ^{VGS=10Vdc, ID =500mAdc}
-
- 13.5
V_GS=5Vdc, I_D =50mAdc
Forward Transconductance
g_FS
80
-
- mmhos V_DS≧2V_DS(ON),I_D =200mAdc
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-Off Delay Time
C_iss
-
17 50 pF
C_oss
- 10 25 pF
C_rss
- 2.5 5.0 pF
SWITCHING CHARACTERISTICS¹
td_(ON)
td_(OFF)
-
7 20
nS
-
11 40
V_DS=25Vdc, V_GS=0, f=1MHz
V_DS=25Vdc, V_GS=0, f=1MHz
V_DS=25Vdc, V_GS=0, f=1MHz
V_DD=25Vdc, ,I_D≅500mAdc
R_G=25Ω,R_L=50Ω, V_GEN=10V
BODY-DRAIN DIODE RATINGS
Diode Forward On-Voltage
V_SD
Source Current Continuous
I_S
Source Current Pulsed
I_SM
Notes:
1. Pulse Test: Pulse Width ≦300µs, Duty Cycle ≦2.0%
-
- -1.5 Vdc I_S=11.5mAdc,V_GS=10V
-
- -115 mAdc
-
- -800 mAdc
18-Dec-2009 Rev. B
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