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| S2N7002DW_15 Datasheet, PDF (2/3 Pages) SeCoS Halbleitertechnologie GmbH – Dual N-Channel MOSFET | |||
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Elektronische Bauelemente
S2N7002DW
115mA, 60V
Dual N-Channel MOSFET
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Teat Conditions
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current TC= 25°C
TC= 125°C
On-State Drain Current
Drain-Source On Resistance
Forward Transconductance
TJ= 25°C
TJ= 125°C
V(BR)DSS
60
-
VGS(TH)
1
-
IGSS
-
-
-
-
IDSS
-
-
ID(on)
0.5
-
-
-
RDS(ON)
-
-
gFS
80
-
Body-Drain Diode Ratings
-
2
±1
1
500
-
7.5
13.5
-
V VGS=0, ID=10μA
V VDS=VGS, ID=250μA
μA VDS=0 , VGS= ±20V
μA VDS=60V, VGS=0
VDS=60V, VGS=0
A VGS=10V, VDS=7.5V
⦠VGS=5V, ID=0.05A
VGS=10V, ID=0.5A
ms VDSâ§2 VDS(ON), ID= 0.2A
Diode Forward OnâVoltage
Source Current Continuous(Body Diode)
Source Current Pulsed
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-off Delay Time
VSD
-
-
-1.5
IS
-
-
-115
ISM
-
-
-800
Dynamic Characteristics
CISS
-
-
50
COSS
CRSS
-
-
25
-
-
5
Switching Characteristics
Td(ON)
-
-
20
Td(OFF)
-
-
40
V IS=115mA, VGS=0
mA
mA
VDS=25V,
pF VGS=0,
f=1MHz
VDD=25V, I D=0.5A
nS RL=50â¦,
VGEN=10V, RG=25â¦
http://www.SeCoSGmbH.com/
19-May-2011 Rev. B
Any changes of specification will not be informed individually.
Page 2 of 3
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