PZT559A Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – Silicon Planar Medium Power Transistor

Elektronische Bauelemente
PZT559A
PNP Silicon
Silicon Planar Medium Power Transistor
ELECTRICAL CHARACTERISTICS (T_A=25 °C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Collector - Base Breakdown Voltage
BVCBO
-180
-
-
V IC= -100uA, IE=0
Increased Operating Voltage
BVCER
-180
-
-
V IC= -1uA, RB≦1KΩ
Collector - Emitter Breakdown
Voltage
BVCEO
-140
-
-
V IC= -10mA, IB=0
Emitter - Base Breakdown Voltage
BVEBO
-7
-
-
V IE= -100uA, IC=0
Collector Cut - Off Current
ICBO
-
-
-20
nA VCB= -150V, IE=0
ICER
-
-
-20
nA VCB = -150V, R≦1KΩ
Emitter Cut - Off Current
IEBO
-
-
-10
nA VEB= -6V, IC=0
VCE(sat)1
-
-40
-60
mV IC= -100mA, IB= -5mA
Collector - Emitter Saturation Voltage
VCE(sat)2
VCE(sat)3
-
-55
-80
mV IC= -500mA, IB= -50mA
-
-85 -120 mV IC= -1A, IB= -100mA
VCE(sat)4
-
-250 -360 mV IC= -3A, IB= -300mA
Base - Emitter Voltage
VBE(sat)
VBE(on)
-
-940 -1.04
V IC= -3A, IB= -300mA
-
-830 -0.93
V VCE= -5V, IC= -3A
*hFE1
100 225
-
VCE= -5V, IC= -10 mA
DC Current Gain
*hFE2
*hFE3
100 200 300
45
80
-
VCE= -5V, IC = -1A
VCE= -5V, IC = -3A
Transition Frequency
Collector Output Capacitance
*hFE4
fT
COB
-
5
-
VCE= -5V, IC = -10A
-
120
-
MHz
VCE= -10V, IC= -100mA,
f=50 MHz
-
33
-
pF VCB= -10 V, f=1 MHz
Switching Time
Turn-on
Ton
Turn-off
Toff
-
42
-
-
636
-
*Measured under pulsed condition. Pulse width = 300 us, Duty cycle ≦ 2 %
nS
VCC= -50V, IC = -1A,
IB1= -IB2 = -100mA
http://www.SeCoSGmbH.com/
28-Apr-2011 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 4