MMDT5451_15 Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – Plastic-Encapsulated Transistor

Elektronische Bauelemente
MMDT5451
0.2 W, 200 mA, 180 V
Plastic-Encapsulated Transistor (Dual)
NPN5551 ELECTRICAL CHARACTERISTICS at Ta = 25°C
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output Capacitance
Noise Figure
SYMBOL
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
hFE(3)
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
fT
COB
NF
MIN.
180
160
6
-
-
80
80
30
-
-
-
-
100
-
-
MAX.
-
-
-
0.05
0.05
-
250
-
0.15
0.2
1
1
300
6.0
8.0
UNIT
V
V
V
µA
µA
V
V
V
V
MHz
pF
dB
TEST CONDITIONS
IC=100µA,IE=0
IC=1mA,IB=0
IE=10µA,IC=0
VCB=120V, IE=0
VEB=4V, IC=0
VCE=5V,IC=1mA
VCE=5V,IC=10mA
VCE=5V,IC=50mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
VCE = 10V, IC = 10mA, f = 100MHz
VCB = 10V, f = 1.0MHz, IE = 0
VCE= 5.0V, IC = 200µA,
RS = 1.0kΩ,f = 1.0kHz
PNP5401 ELECTRICAL CHARACTERISTICS at Ta = 25°C
PARAMETER
SYMBOL MIN. MAX. UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output Capacitance
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
hFE(3)
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
fT
COB
-160
-150
-5
-
-
50
60
50
-
-
-
-
100
-
-
-
-
-50
-50
-
240
-
-0.2
-0.5
-1
-1
300
6.0
V
V
V
nA
nA
V
V
V
V
MHz
pF
Noise Figure
NF
-
8.0
dB
TEST CONDITIONS
IC=-100µA,IE=0
IC=-1mA,IB=0
IE=-10µA,IC=0
VCB=-120V, IE=0
VEB=-3V, IC=0
VCE=-5V,IC=-1mA
VCE=-5V,IC=-10mA
VCE=-5V,IC=-50mA
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
VCE = -10V, IC = -10mA, f = 100MHz
VCB = -10V, f = 1.0MHz, IE = 0
VCE= -5.0V, IC = -200µA,
RS = 10 Ω, f = 1.0kHz
http://www.SeCoSGmbH.com/
28-Oct-2009 Rev. B
Any changes of specification will not be informed individually.
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