MMDT3906_15 Datasheet, PDF (2/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

Elektronische Bauelemente
200
150
MMDT3906
PNP Silicon
Multi-Chip Transistor
100
f = 1MHz
100
10
50
0
0
1000
25 50 75 100 125 150 175 200
T_A, AMBIENT TEMPERATURE (°C)
Fig. 1, Max Power Dissipation vs
Ambient Temperature
T_A = 125°C
100
T_A = -25°C
T_A = +25°C
10
Cibo
1
0.1
1
Cobo
10
100
V_CB, COLLECTOR-BASE VOLTAGE (V)
Fig. 2, Input and Output Capacitance vs.
Collector-Base Voltage
10
I_C
I_B ^{= 10}
1
0.1
1
0.1
V_CE = 1.0V
1
10
100
I_C, COLLECTOR CURRENT (mA)
Fig. 3, Typical DC Current Gain vs
Collector Current
1.0
1000
0.9
0.01
1
10
100
1000
I_C, COLLECTOR CURRENT (mA)
Fig. 4, Typical Collector-Emitter Saturation Voltage
vs. Collector Current
0.8
http://www.SeCoSGmbH.com
06-May-2010 Rev.C
0.7
0.6
0.5
1
I_C
I_B ^{= 10}
10
100
I_C, COLLECTOR CURRENT (mA)
Fig. 5, Typical Base-Emitter
Saturation Voltage vs. Collector Current
Any changing of specification will not be informed individual
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