MMDT2907A_15 Datasheet, PDF (2/3 Pages) SeCoS Halbleitertechnologie GmbH – Multi-Chip Transistor

Elektronische Bauelemente
MMDT2907A
PNP Silicon
Multi-Chip Transistor
TYPICAL CHARACTERISTICS
3.0
VCE = –1.0 V
2.0
VCE = –10 V
1.0
0.7
0.5
TJ = 125°C
25°C
– 55°C
0.3
0.2
–0.1
–0.2 –0.3 –0.5 –0.7 –1.0
–2.0 –3.0 –5.0 –7.0 –10
IC, Collector Current (mA)
–20 –30
Figure 3. DC Current Gain
–50 –70 –100
–200 –300 –500
–1.0
–0.8
IC = –1.0 mA
–0.6
–10 mA
–100 mA
–500 mA
–0.4
–0.2
0
–0.005 –0.01
–0.02 –0.03 –0.05 –0.07 –0.1
–0.2 –0.3 –0.5 –0.7 –1.0
IB, Base Current (mA)
–2.0 –3.0
Figure 4. Collector Saturation Region
–5.0 –7.0 –10
–20 –30 –50
300
200
100
tr
70
50
VCC = –30 V
IC/IB = 10
TJ = 25°C
30
20
td @ VBE(off) = 0 V
10
7.0
5.0
2.0 V
3.0
–5.0 –7.0 –10
–20 –30 –50 –70 –100
IC, Collector Current
–200 –300 –500
Figure 5. Turn–On Time
500
300
200
tf
100
70
50
30
t′_s = ts – 1/8 tf
20
VCC = –30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
10
7.0
5.0
–5.0 –7.0 –10
–20 –30 –50 –70 –100
IC, Collector Current (mA)
–200 –300 –500
Figure 6. Turn–Off Time
http://www.SeCoSGmbH.com
01-Jan-2006 Rev. B
Any changing of specification will not be informed individual
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