MMBT720_15 Datasheet, PDF (2/2 Pages) SeCoS Halbleitertechnologie GmbH – PNP Plastic Encapsulated Transistor

Elektronische Bauelemente
MMBT720
-1.5A , -40V
PNP Plastic Encapsulated Transistor
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Collector-Base Breakdown Voltage
V(BR)CBO
-40
-
Collector-Emitter Breakdown Voltage¹
V(BR)CEO
-40
-
-
V IC= -100µA, IE=0
-
V IC= -10mA, IB=0
Emitter-Base Breakdown Voltage
V(BR)EBO
-5
-
-
V IE= -100µA, IC=0
Collector Cut-Off Current
ICBO
-
-
-0.1
µA VCB= -35V, IE=0
Collector Cut-Off Current
ICES
-
-
-0.1
µA VCE= -35V, VBE=0
Emitter Cut-Off Current
IEBO
-
-
-0.1
µA VEB= -4V, IC=0
300
-
-
VCE= -2V, IC= -10mA
DC Current Gain ¹
300
-
-
hFE
180
-
-
VCE= -2V, IC= -100mA
VCE= -2V, IC= -1A
60
-
-
VCE= -2V, IC= -1.5A
12
-
-
VCE= -2V, IC= -3A
-
-
-40
IC= -100mA, IB = -10mA
Collector-Emitter Saturation Voltage¹
VCE(sat)
-
-
-220 mV IC= -1A, IB = -50mA
Base-Emitter Saturation Voltage¹
Base-emitter voltage¹
-
-
-330
IC= -1.5A, IB = -100mA
VBE(sat)
-
-
-1
IC= -1.5A, IB= -75mA
V
VBE(on)
-
-
-1
VCE= -2V, IC= -1.5A
Transition frequency
fT
150
-
-
MHz VCE= -10V,IC= -50mA, f=100MHz
Collector output capacitance
Cob
-
-
25
pF VCB= -10V, f=1MHz
Turn-on Time
Turn-off Time
t(on)
-
40
-
nS ^{VCC= -15V,IC= -0.75A,}
t(off)
-
435
-
IB1= IB2= -15mA
Note:
1. Measured under pulse conditions . Pulse width =300µs. Duty cycle≤2%.
http://www.SeCoSGmbH.com/
20-Dec-2013 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 2