MMBT2907Q_15 Datasheet, PDF (2/3 Pages) SeCoS Halbleitertechnologie GmbH – General Purpose Transistor

Elektronische Bauelemente
MMBT2907Q
PNP Silicon
General Purpose Transistor
TYPICAL CHARACTERISTICS
3.0
VCE = –1.0 V
2.0
VCE = –10 V
1.0
0.7
0.5
TJ = 125°C
25°C
– 55°C
0.3
0.2
–0.1
–0.2 –0.3 –0.5 –0.7 –1.0
–2.0 –3.0 –5.0 –7.0 –10
IC, Collector Current (mA)
–20 –30
Figure 3. DC Current Gain
–50 –70 –100
–200 –300 –500
–1.0
–0.8
IC = –1.0 mA
–0.6
–10 mA
–100 mA
–500 mA
–0.4
–0.2
0
–0.005 –0.01
–0.02 –0.03 –0.05 –0.07 –0.1
–0.2 –0.3 –0.5 –0.7 –1.0
IB, Base Current (mA)
–2.0 –3.0
Figure 4. Collector Saturation Region
–5.0 –7.0 –10
–20 –30 –50
300
200
100
tr
70
50
VCC = –30 V
IC/IB = 10
TJ = 25°C
30
20
td @ VBE(off) = 0 V
10
7.0
5.0
2.0 V
3.0
–5.0 –7.0 –10
–20 –30 –50 –70 –100
IC, Collector Current
–200 –300 –500
Figure 5. Turn–On Time
500
300
200
tf
100
70
50
30
t′_s = ts – 1/8 tf
20
VCC = –30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
10
7.0
5.0
–5.0 –7.0 –10
–20 –30 –50 –70 –100
IC, Collector Current (mA)
–200 –300 –500
Figure 6. Turn–Off Time
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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