MMBT2907A Datasheet, PDF (2/4 Pages) STMicroelectronics – SMALL SIGNAL PNP TRANSISTOR

Elektronische Bauelemente
MMBT2907A
PNP Silicon
General Purpose Transistor
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = –0.1 mAdc, VCE = –10 Vdc)
hFE
—
MMBT2907
35
—
MMBT2907A
75
—
(IC = –1.0 mAdc, VCE = –10 Vdc)
MMBT2907
MMBT2907A
50
—
100
—
(IC = –10 mAdc, VCE = –10 Vdc)
MMBT2907
MMBT2907A
75
—
100
—
(IC = –150 mAdc, VCE = –10 Vdc) (3)
MMBT2907
MMBT2907A
—
—
100
300
(IC = –500 mAdc, VCE = –10 Vdc) (3)
MMBT2907
MMBT2907A
30
—
50
—
Collector – Emitter Saturation Voltage (3)
(IC = –150 mAdc, IB = –15 mAdc)
(IC = –500 mAdc, IB = –50 mAdc)
Base – Emitter Saturation Voltage (3)
(IC = –150 mAdc, IB = –15 mAdc)
(IC = –500 mAdc, IB = –50 mAdc)
SMALL– SIGNAL CHARACTERISTICS
VCE(sat)
—
—
VBE(sat)
—
—
Vdc
–0.4
–1.6
Vdc
–1.3
–2.6
Current – Gain — Bandwidth Product (3),(4)
(IC = –50 mAdc, VCE = –20 Vdc, f = 100 MHz)
Output Capacitance
(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = –2.0 Vdc, IC = 0, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
fT
MHz
200
—
Cobo
pF
—
8.0
Cibo
pF
—
30
Turn–On Time
Delay Time
Rise Time
(VCC = –30 Vdc, IC = –150 mAdc,
IB1 = –15 mAdc)
Turn–Off Time
Storage Time
Fall Time
(VCC = –6.0 Vdc, IC = –150 mAdc,
IB1 = IB2 = –15 mAdc)
v v 3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
4. fT is defined as the frequency at which |hfe| extrapolates to unity.
ton
—
45
td
—
10
ns
tr
—
40
toff
—
100
ts
—
80
ns
tf
—
30
INPUT
Zo = 50 Ω
PRF = 150 PPS
RISE TIME ≤ 2.0 ns
P.W. < 200 ns
0
–16 V
1.0 k
50
–30 V
200
TO OSCILLOSCOPE
RISE TIME ≤ 5.0 ns
200 ns
Figure 1. Delay and Rise Time Test Circuit
INPUT
Zo = 50 Ω
PRF = 150 PPS
RISE TIME ≤ 2.0 ns
P.W. < 200 ns
+15 V –6.0 V
1.0 k 37
0
–30 V
1.0 k
50
1N916
TO OSCILLOSCOPE
RISE TIME ≤ 5.0 ns
200 ns
Figure 2. Storage and Fall Time Test Circuit
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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