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| MMBT2222AW Datasheet, PDF (2/4 Pages) Weitron Technology – NPN General Purpose Transistors | |||
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Elektronische Bauelemente
MMBT2222AW
NPN Silicon
General Purpose Transistor
ELECTRICAL CHARACTERISTICS at Ta = 25°C
CHARACTERISTIC
TEST CONDITION
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter=Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Output Capacitance
Delay Time
Rise Time
IC=10μA, IE=0
IC = 10 mA, IB = 0
IE=-10μA, IC=0
VCB=70V, IE=0
VEB=35V, IC=0
VEB=3V, IC=0
VCE=10V, IC=-0.1mA
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=150mA
VCE=10V, IC=500mA
VCE=1V, IC=500mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
VCE=20V, IC=20mA, f=1MHz
VCB=10V, IE=0, f=1MHz
Vcc=30V, VBE(Off)=-0.5V
IC=150mA, IB1=15mA
Storage Time
Fall Time
Vcc=30V, IC=150mA
IB1=- IB2 =15mA
SYMBOL
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE1
hFE2
hFE3
hFE4
hFE5
hFE6
VCE(sat)
VCE(sat)
VBE(sat)
VBE(sat)
fT
Cob
Td
Tr
TS
TF
MIN.
75
40
6
35
50
75
100
40
35
300
MAX.
100
100
100
UNIT
V
V
V
nA
nA
nA
300
1
V
0.3
V
2.0
V
1.2
V
MHz
8
pF
10
nS
25
nS
225
nS
60
nS
20-Oct-2009 Rev. C
Page 2 of 4
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