MMBT2222AT_15 Datasheet, PDF (2/5 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

Elektronische Bauelemente
MMBT2222AT
NPN Silicon
General Purpose Transistors
ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)
Characteristic
Symbol Min. Max. Unit
Test Conditions
Collector-Emitter Breakdown Voltage ¹
Off Characteristics
V(BR)CEO
40
-
V IC=10 mA, IB=0
Collector-Base Breakdown Voltage
V(BR)CBO
75
-
V IC=10µA, IE=0
Emitter-Base Breakdown Voltage
V(BR)EBO
6
-
V IE= -10 µA, IC=0
Collector Cut-Off Current
IBL
-
20
nA VCE=60V, VEB=3V
Emitter Cut-Off Current
ICEX
-
100
On Characteristics¹
nA VCE=60V, VBE=3V
35
-
IC=0.1mA, VCE=10V
DC Current Gain¹
50
-
hFE
75
-
IC=1mA, VCE=10V
IC=10mA, VCE=10V
100
-
IC=150mA, VCE=10V
40
-
IC=500mA, VCE=10V
-
0.3
IC=150mA, IB=15mA
Collector-Emitter Saturation Voltage
VCE(sat)
V
-
1
IC=500mA, IB=50mA
Base-Emitter Saturation Voltage
0.6
1.2
VBE(sat)
V
-
2
Small-Signal Characteristics
IC=150mA, IB=15mA
IC=500mA, IB=50mA
Curren-Gain-Bandwidth Product
fT
250
-
MHz
VCE=20V, IC=20mA,
f=100MHz
Output Capacitance
Cobo
-
8
pF VCB=10V, IE=0, f =1.0 MHz
Input Capacitance
Cibo
-
30
pF VBE=0.5V, IE=0, f =1.0 MHz
Input Impedancen
Voltage Feedback Ratio
hie
0.25
1.25
KΩ VCE=10V, IC=10mA, f=1.0kHz
hre
-
4
X10^-4 VCE=10V, IC=10mA, f=1.0kHz
Small-Signal Current Gain
hfe
75
375
VCE=10V, IC=10mAdc, f=1.0kHz
Output Admittance
Noise Figure
hoe
25
200 µmhos VCE=10V, IC=10mAdc, f=1.0kHz
NF
-
4.0
dB
VCE=10V, IC=100µA,
RS=1KΩ, f=1.0kHz
Switching Characteristics
Delay Time
Rise Time
Td
Tr
-
-
10
25
nS
VCC=3V, VBE= -0.5 V,
IC=150mA, IB1=15mA
Storage Time
Fall Time
TS
TF
-
-
225
60
nS
VCC=30V, IC=150mA,
IB1=IB2=15mA
Note:
1. Pulse Test: Pulse Width ≤ 300s, Duty Cycle ≤ 2.0%.
http://www.SeCoSGmbH.com/
17-Aug-2011 Rev. A
Any changes of specification will not be informed individually.
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