BC337_11 Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – NPN Plastic-Encapsulate Transistor

Elektronische Bauelemente
BC337 / BC338
NPN Plastic-Encapsulate Transistor
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Collector to Base Breakdown BC337
Voltage
BC338
Collector to Emitter Breakdown BC337
Voltage
BC338
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
BC337
BC338
Collector Cut-Off Current
BC337
BC338
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE (1)
hFE (2)
VCE(sat)
VBE(sat)
VBE
fT
Cob
50
-
30
-
45
-
25
-
5
-
-
-
-
-
-
-
-
-
-
-
100 -
60
-
-
-
-
-
-
-
210 -
-
15
-
-
V IC=100µA, IE=0
-
-
V IC=10mA, IB=0
-
V IE=10µA, IC=0
0.1
µA ^{VCB=45V, IE=0}
0.1
VCB=25V, IE=0
0.2
µA ^{VCE=40V, IB=0}
0.2
VCE=20V, IB=0
0.1 µA VEB=4V, IC=0
630
VCE=1V, IC=100mA
-
VCE=1V, IC=300mA
0.7
V IC=500mA, IB=50mA
1.2
V IC=500mA, IB=50mA
1.2
V VCE=1V, IC=300mA
- MHz VCE=5V, IC=10mA, f=100MHz
-
pF VCB=10V, IE=0, f=1MHz
http://www.SeCoSGmbH.com/
04-Mar-2011 Rev. B
Any changes of specification will not be informed individually.
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