2SD2045_15 Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – Plastic-Encapsulate Transistors

Elektronische Bauelemente
2SD2045
NPN - PNP
Plastic-Encapsulate Transistors
ELECTRICAL CHARACTERISTICS OF TR1 (NPN Transistor) @Ta = 25°C
Parameter
Test Condition
Symbol Min. Typ.
Collector-Base Breakdown Voltage
IC=100µA, IE=0
V(BR)CBO
40
-
Collector-Emitter Breakdown Voltage
IC =10mA, IB=0
V(BR)CEO
30
-
Collector-Emitter Breakdown Voltage IC =1µA, VBE(OFF)= -0.5V
V(BR)CEX
40
-
Emitter-Base Breakdown Voltage
IE=100µA, IC=0
V(BR)EBO
7
-
Collector Cutoff Current
VCB=32V, IE=0
ICBO
-
-
Collector cut-off current
VCE=16V, R≦1KΩ
ICER
-
-
Emitter Cutoff Current
VEB=6V, IC=0
IEBO
-
-
DC Current Gain
VCE=2V, IC=100mA
hFE
180
-
Collector-emitter Saturation Voltage
IC=750mA, IB=15mA
VCE(sat)
-
-
Base-Emitter Saturation Voltage
IC=750mA, IB=15mA
VBE(sat)
-
-
Max.
-
-
-
-
20
20
20
500
0.375
1.2
Unit
V
V
V
V
nA
nA
nA
V
V
ELECTRICAL CHARACTERISTICS OF TR2 (PNP Transistor) @Ta = 25°C
Parameter
Test Condition
Symbol Min. Typ. Max.
Collector-Base Breakdown Voltage
IC= -100µA, IE=0
V(BR)CBO
-40
-
-
Collector-Emitter Breakdown Voltage
IC = -10mA, IB=0
V(BR)CEO
-30
-
-
Collector-Emitter Breakdown Voltage IC = -1µA, VBE(OFF)=0.5V
V(BR)CEX
-40
-
-
Emitter-Base Breakdown Voltage
IE= -100µA, IC=0
V(BR)EBO
-7
-
-
Collector Cutoff Current
Collector cut-off current
Emitter Cutoff Current
DC Current Gain
Collector-emitter Saturation Voltage
Base-Emitter Saturation Voltage
VCB= -32V, IE=0
VCE= -16V, R≦1KΩ
VEB= -6V, IC=0
VCE= -2V, IC= -100mA
IC= -750mA, IB= -15mA
IC= -750mA, IB= -15mA
ICBO
ICER
IEBO
hFE
VCE(sat)
VBE(sat)
-
-
-
180
-
-
-
-20
-
-20
-
-20
-
500
- -0.375
-
-1.2
Unit
V
V
V
V
nA
nA
nA
V
V
http://www.SeCoSGmbH.com/
19-Nov-2013 Rev. A
Any changes of specification will not be informed individually.
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