2SC6517 Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – 0.5A , 350V NPN Plastic Encapsulated Transistor

Elektronische Bauelemente
2SC6517
0.5A , 350V
NPN Plastic Encapsulated Transistor
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Condition
Off Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
V(BR)CBO
350
-
-
V IC=100µA
V(BR)CEO
350
-
-
V IC=1mA
V(BR)EBO
6
-
-
V IE=10µA
ICBO
-
-
50 nA VCB=250V
IEBO
-
-
50 nA VEB=5V
On Characteristics
DC Current Gain
Collector-Emitter Saturation Voltage ¹
Base-Emitter Saturation Voltage
Base-Emitter on Voltage
20
-
-
30
-
-
hFE
30
-
200
20
-
200
15
-
-
-
-
0.3
-
VCE(sat)
-
-
0.35
-
0.5
-
-
1
-
-
0.75
VBE(sat)
-
-
0.85
-
-
0.9
VBE(on)
-
-
2
Small-Signal Characteristics
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=30mA
VCE=10V, IC=50mA
VCE=10V, IC=100mA
IC=10mA, IB=1mA
IC=20mA, IB=2mA
V
IC=30mA, IB=3mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
V I_C=20mA, I_B=2mA
IC=30mA, IB=3mA
V IC=100mA, VCE=10V
Transition Frequency
Collector-Base Capacitance
fT
40
-
200 MHz VCE=20V, IC=10mA, f=20MHz
Ccb
-
6
-
pF VCB=20V, f=1MHz
Emitter-Base Capacitance
Ceb
Notes:
1. Pulse test : Pulse width=300µs, duty cycle=2%.
-
80
-
pF VEB=0.5V, f=1MHz
http://www.SeCoSGmbH.com/
30-Oct-2015 Rev. A
Any changes of specification will not be informed individually.
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