2SC4097 Datasheet, PDF (2/3 Pages) Rohm – Medium Power Transistor (32V, 0.5A)

Elektronische Bauelemente
2SC4097
32V, 0.5A
Medium Power Transistor
ƔELECTRICAL CHARACTERISTICS (Ta = 25к)
TYPE NUMBER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Transition Frequency
Output Capacitance
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE (sat)
hFE
fT
Cob
Min.
40
32
5
-
-
-
82
-
-
Typ.
-
-
-
-
-
-
-
250
6.0
Max.
-
-
-
1
1
0.4
390
-
-
UNIT
V
V
V
µA
µA
V
-
MHz
pF
TEST CONDITIONS
IC = 100 µA
IC = 1 mA
IE = 100 µA
VCB = 20 V
VEB = 4 V
IC / IB = 500 mA / 50 mA
VCE = 3 V, IC = 100 mA
VCE = 5 V, IE = -20 mA,
f = 100 MHz
VCB = 10 V, IE = 0 A,
f = 1 MHz
Ɣh_FE VALUES ARE CLASSIFIED AS FOLLOWS:
ITEM
hFE
Marking
P
82 ~ 180
CP
Q
120 ~ 270
CQ
R
180 ~ 390
CR
ƔELECTRICAL CHARACTERISTIC CURVES
1000
500 ^{V CE=6V}
200
100
50
Ta₌100 _к
20
80 к
10
25 к
5
-25 к
-55 к
2
1
0.5
0.2
0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
BASE TO EMITTER VOLTAGE : VBE(V)
Fig.1 Grounded emitter propagation
characteristics
100
Ta=25 _{к 0.50mA}
50
0.45mA
0.40mA
0.35mA
0.30mA
0.25mA
0.20mA
0.15mA
0.10mA
0.05mA
0
IB =0 A
0
1
2
3
4
5
COLLECTOR TO EMITTER VOLTAGE : VCE(V)
Fig.2 Grounded emitter output
characteris tics ( )
500
Ta=25 к
400
2mA
1.8mA
1.6mA
1.4mA
300
1.2mA
1.0mA
0.8mA
200
0.6mA
0.4mA
100
0.2mA
0
IB =0 A
0
1
2
3
4
5
COLLECTOR TO EMITTER VOLTAGE : VCE(V)
Fig.3 Grounded emitter output
characteris tics ( )
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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