UMX1N Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – Dual NPN General Purpose Transistors

Elektronische Bauelemente
UMX1N
Dual NPN General Purpose Transistors
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
 Two 2SC2412K chips in a package.
 Mounting possible with SOT-363 automatic
mounting machines.
 Transistor elements are independent, eliminating
interference.
 Mounting cost and area can be cut in half.
EQUIVALENT CIRCUIT
(3) (2) (1)
Tr1
Tr2
(4) (5) (6)
MARKING：X1
SOT-363
A
E
6
5
4^L
B
F¹
2
3
C
H
DG
K
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.00 2.20
2.15 2.45
1.15 1.35
0.90 1.10
1.20 1.40
0.15 0.35
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.100 REF.
0.525 REF.
0.08 0.15
8°
0.650 TYP.
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
Parameter
Symbol
Value
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector Power dissipation
Junction & Storage temperature
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_C
P_C
T_J, T_STG
60
50
7
150
150
150, -55 ~ 150
Unit
V
V
V
mA
mW
℃
ABSOLUTE MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS at Ta = 25°C
Parameter
Symbol
Min.
Typ.
Max. _{Unit Test Conditions}
Collector-base breakdown voltage
V_(BR)CBO
60
-
Collector-emitter breakdown voltage
V_(BR)CEO
50
-
-
I_C= 50A, I_E=0
V
-
I_C= 1mA , I_B= 0
Emitter-base breakdown voltage
V_(BR)EBO
7
-
-
V I_E= 50A , I_C= 0
Collector cut-off current
I_CBO
-
-
0.1
A V_CB= 60V, I_E=0
Emitter cut-off current
I_EBO
-
-
0.1
A V_EB= 7V, I_C= 0
DC current gain
h_FE
120
-
560
V_CE= 6V, I_C= 1mA
Collector-emitter saturation voltage
V_CE(sat)
-
-
0.4
V I_C= 50mA, I_B= 5mA
Transition frequency
f_T
-
180
-
MHz
V_CE= 12V, I_C= 2mA,
f=100MHz
Collector output capacitance
C_ob
-
2.0
3.5
pF V_CB= 12V, I_E= 0, f=1MHz
http://www.SeCoSGmbH.com/
12-Jul-2010 Rev. A
Any changes of specification will not be informed individually.
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