UMX18N_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – Plastic-Encapsulated General Purpose Transistors

Elektronische Bauelemente
UMX18N
Plastic-Encapsulated
General Purpose Transistors (dual transistors)
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
z Two chips in a package.
z Mounting possible with SOT-363 automatic mounting machines.
z Transistor elements are independent, eliminating interference.
z Mounting cost and area be cut in half.
MARKING
X18
6 54
C BE
12 3
EB C
SOT-363
A
E
L
B
1
F
C
H
DG
K
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.00 2.20
2.15 2.45
1.15 1.35
0.90 1.10
1.20 1.40
0.15 0.35
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.100 REF.
0.525 REF.
0.08 0.15
8°
0.650 TYP.
NPN ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction & Storage temperature
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J, T_STG
15
12
6
0.5
0.15
150, -55 ~ 150
Unit
V
V
V
A
W
°C
NPN ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
V_(BR)CBO
15
V_(BR)CEO
12
V_(BR)EBO
6
I_CBO
-
-
-
V
I_C=10μA, I_E=0
-
-
V
I_C=1mA, I_B=0
-
-
V
I_E=10μA, I_C=0
-
100
nA V_CB=15V, I_E=0
Emitter Cut-off Current
I_EBO
100
nA V_EB=6V, I_C=0
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
h_FE
270
-
680
V_CE=2V, I_C=10mA
V_CE(sat)
-
f_T
-
-
0.25
V I_C=200mA, I_B=10mA
320
-
MHz V_CE=2V, I_E=-10mA, f=100MHz
C_OB
-
7.5
-
pF V_CB=10V, I_E=0, f=1MHz
http://www.SeCoSGmbH.com/
15-July-2009 Rev. A
Any changes of specification will not be informed individually.
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