UMT1N_15 Datasheet, PDF (1/1 Pages) SeCoS Halbleitertechnologie GmbH – Dual PNP General Purpose Transistors

Elektronische Bauelemente
UMT1N
-0.15A , -60V
Dual PNP General Purpose Transistors
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Two 2SA1037AK chips in a package.
Mounting possible with SOT-363 automatic
mounting machines.
Transistor elements are independent, eliminating
interference.
Mounting cost and area can be cut in half.
MARKING：
T1
PACKAGE INFORMATION
Package
MPQ
SOT-363
3K
Leader Size
7 inch
SOT-363
A
E
L
6
5
4
B
F¹
2
3
C
H
DG
K
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.00 2.20
2.15 2.45
1.15 1.35
0.90 1.10
1.20 1.40
0.15 0.35
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.100 REF.
0.525 REF.
0.08 0.15
8°
0.650 TYP.
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise noted)
Parameter
Symbol
Value
Collector-base voltage
V(BR)CBO
-60
Collector-emitter voltage
V(BR)CEO
-50
Emitter-base voltage
V(BR)EBO
-6
Collector current
IC
-150
Collector Power dissipation
PC
150
Junction & Storage temperature
TJ, TSTG
150, -55 ~ 150
Unit
V
V
V
mA
mW
℃
ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise noted)
Parameter
Symbol ^Min.
Typ.
Max.
Collector-base breakdown voltage V(BR)CBO
-60
-
-
Collector-emitter breakdown voltage V(BR)CEO
-50
-
-
Emitter-base breakdown voltage
V(BR)EBO
-6
-
-
Collector cut-off current
ICBO
-
-
-0.1
Emitter cut-off current
IEBO
-
-
-0.1
DC current gain
hFE
120
-
560
Collector-emitter saturation voltage VCE(sat)
-
-
-0.5
Transition frequency
fT
-
140
-
Collector output capacitance
Cob
-
-
5
Unit Test Conditions
IC= -50µA, IE=0
V IC= -1mA , IB=0
IE= -50µA , IC=0
µA VCB= -60V, IE=0
µA VEB= -6V, IC=0
VCE= -6V, IC= -1mA
V IC= -50mA, IB= -5mA
MHz
VCE= -12V, IE=2mA,
f=100MHz
pF VCB=-12V, IE=0, f=1MHz
http://www.SeCoSGmbH.com/
15-Jul-2011 Rev. A
Any changes of specification will not be informed individually.
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