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UMH9N Datasheet, PDF (1/2 Pages) Rohm – General purpose (dual digital transistors)
Elektronische Bauelemente
* Features
UMH9N
NPN Multi-Chip
Built-in Resistors Transistor
RoHS Compliant Product
.055(1.40)
.047(1.20)
SOT-363
8o
.026TYP
0o
(0.65TYP)
.021REF
(0.525)REF
* Mounting possible with 3automatic mounting
machines.
.096(2.45)
.085(2.15)
.053(1.35)
.045(1.15)
* Transistor elements are independent,
eliminating interference.
* Mounting cost and area can be cut in half.
(3)
(2)
R1
R2
Q1
MARKING:H9
R2
R1
(4)
(5)
(1)
Q2
(6) R1=10K R2=47K
.014(0.35)
.006(0.15)
.087(2.20)
.079(2.00)
.043(1.10)
.035(0.90)
.018(0.46)
.010(0.26)
.006(0.15)
.003(0.08)
.004(0.10)
.000(0.00)
.039(1.00)
.035(0.90)
Dimensions in inches and (millimeters)
Absolute maximum ratings(Ta=25℃)
Parameter
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
Symbol
VCC
VIN
IO
IC(MAX)
Pd
Tj
Tstg
Limits
Unit
50
V
-6~40
V
70
mA
100
150(TOTAL)
mW
150
℃
-55~150
℃
Electrical characteristics (Ta=25℃)
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
Symbol
Min.
Typ
Max.
Unit
Conditions
VI(off)
VI(on)
1.4
0.3
V
VCC=5V ,IO=100μA
VO=0.3V ,IO=1 mA
VO(on)
0.3
V
IO/II=5mA/0.25mA
II
0.88
mA
VI=5V
IO(off)
0.5
µA
VCC=50V, VI=0
GI
68
VO=5V ,IO=5mA
R1
7
10
13
KΩ
R2/R1
3.7
4.7
5.7
fT
250
MHz
VCE=10V ,IE=-5mA,f=100MHz
http://www.SeCoSGmbH.com
01-Jan-2006 Rev. B
Any changing of specification will not be informed individual
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