UMH15N_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – NPN Multi-Chip

Elektronische Bauelemente
Features
* ^{Two DTC144T chips in a package}
* Transistor elements are independent,
eliminating interference.
* Mounting cost and area can be cut in half.
UMH15N
NPN Multi-Chip
Built-in Resistors Transistor
RoHS Compliant Product
.055(1.40)
.047(1.20)
SOT-363
8^o
.026TYP
0^o
(0.65TYP)
.021REF
(0.525)REF
.096(2.45)
.085(2.15)
.053(1.35)
.045(1.15)
MARKING H15
.014(0.35)
.006(0.15)
.087(2.20)
.079(2.00)
.043(1.10)
.035(0.90)
.018(0.46)
.010(0.26)
.006(0.15)
.003(0.08)
.004(0.10)
.000(0.00)
.039(1.00)
.035(0.90)
Absolute maximum ratings(Ta=25℃)
Dimensions in inches and (millimeters)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector Power dissipation
Junction temperature
Storage temperature
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_C
P_C
Tj
Tstg
Electrical characteristics (Ta=25℃)
Limits
50
50
5
100
150
150
-55~150
Unit
V
V
V
mA
mW
℃
℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
Transition frequency
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
V_CE(sat)
h_FE
R₁
f_T
Min.
50
50
5
100
32.9
Typ Max. Unit
Conditions
V
I_C=50μA
V
I_C=1mA
V
I_E=50μA
0.5 μA
V_CB=50V
0.5 μA
V_EB=4V
0.3
V
I_C=10mA,I_B=1mA
600
V_CE=5V,I_C=1mA
47
61.1 KΩ
250
MHz V_CE=10V ,I_E=-5mA,f=100MHz
http://www.SeCoSGmbH.com
01-Jan-2006 Rev. A
Any changing of specification will not be informed individual
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