UMH13N_15 Datasheet, PDF (1/1 Pages) SeCoS Halbleitertechnologie GmbH – Dual NPN+PNP Digital Transistors

Elektronische Bauelemente
UMH13N
Dual NPN+PNP Digital Transistors
(Built-in Resistors)
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Two DTC144T chips in a package.
SOT-363
MARKING
H13
PACKAGE INFORMATION
Package
MPQ
SOT-363
3K
Leader Size
7 inch
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.00 2.20
2.15 2.45
1.15 1.35
0.90 1.10
1.20 1.40
0.15 0.35
REF.
G
H
J
K
L
Top View
Millimeter
Min. Max.
0.100 REF.
0.525 REF.
0.08 0.15
8°
0.650 TYP.
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Value
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction & Storage temperature
VCBO
VCEO
VEBO
IC
PD
TJ, TSTG
50
50
5
100
150
150, -55 ~ 150
Unit
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
V(BR)CBO
50
-
-
V(BR)CEO
50
-
-
IC=50µA, IE=0
V
IC=1mA, IB=0
Emitter-base breakdown voltage
V(BR)EBO
5
-
-
V IE=50µA, IC=0
Collector cut-off current
ICBO
-
-
0.5
µA VCB=50V, IE=0
Emitter cut-off current
IEBO
-
-
0.5
µA VEB=4V, IC=0
Collector-emitter saturation voltage
VCE(sat)
-
-
0.3
V IC=5mA, IB=0.5mA
DC current transfer ratio
hFE
100 - 600
VCE=5V, IC=1mA
Input resistance
R1
32.9 - 61.1 KΩ
Transition frequency
fT
- 250 -
MHz VCE=10V, IC=5mA, f=100MHz
http://www.SeCoSGmbH.com/
1-Nov-2011 Rev. A
Any changes of specification will not be informed individually.
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