UMH11N Datasheet, PDF (1/2 Pages) Rohm – General purpose (dual digital transistors)

Elektronische Bauelemente
UMH11N
NPN Multi-Chip
Built-in Resistors Transistor
RoHS Compliant Product
Features
* Mounting possible with UMT3 automatic mounting
machines.
* Transistor elements are independent,
eliminating interference.
* Mounting cost and area can be cut in half.
* Two DTC114E chips in a UMT package
MARKING H11
.055(1.40)
.047(1.20)
SOT-363
.026TYP
(0.65TYP)
.021REF
(0.525)REF
.096(2.45)
.085(2.15)
.014(0.35)
.006(0.15)
.087(2.20)
.079(2.00)
.018(0.46)
.010(0.26)
8^o
0^o
.053(1.35)
.045(1.15)
.006(0.15)
.003(0.08)
.004(0.10)
.000(0.00)
.043(1.10)
.035(0.90)
.039(1.00)
.035(0.90)
Absolute maximum ratings(Ta=25 )
Parameter
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
Symbol
V_CC
V_IN
I_O
I_C(MAX)
Pd
Tj
Ts tg
Dimensions in inches and (millimeters)
Limits
Unit
50
V
-10~ 40
V
50
mA
100
150(TOTAL)
mW
150
-55~ 150
Electrical characteristics (Ta=25℃)
Parameter
Symbol Min.
Typ
Max.
Unit
Conditions
Input voltage
V_I(off)
V_I(on)
3
0.5
V
V_CC=5V ,I_O=100µA
V_O=0.3V ,I_O=10 mA
Output voltage
V_O(on)
0.3
V
I_O/I_I=10mA/0.5mA
Input current
I_I
0.88
mA
V_I=5V
Output current
I_O(off)
0.5
µA
V_CC=50V, V_I=0
DC current gain
G_I
30
V_O=5V ,I_O=5mA
Input resistance
R₁
7
10
13
KΩ
Resistance ratio
R₂/R₁
0.8
1
1.2
Transition frequency
f_T
250
MHz
V_CE=10V ,I_E=-5mA,f=100MHz
http://www.SeCoSGmbH.com
01-Jan-2006 Rev. B
Any changing of specification will not be informed individual
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