UMD6N Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – Dual NPN+PNP Digital Transistors

Elektronische Bauelemente
UMD6N
Dual NPN+PNP Digital Transistors
(Built-in Resistors)
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
 DTA143T(PNP) and DTC143T(NPN) transistors
are built-in a package.
 Transistor elements are independent, eliminating
interference.
 Mounting cost and area can be cut in half.
SOT-363
A
E
L
EQUIVALENT CIRCUIT
B

F
C
H
DG
K
J
MARKING：D6
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.00 2.20
2.15 2.45
1.15 1.35
0.90 1.10
1.20 1.40
0.15 0.35
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.100 REF.
0.525 REF.
0.08 0.15
8°
0.650 TYP.
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
Parameter
Symbol
Value
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector Power dissipation
Junction & Storage temperature
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_C
P_C
T_J, T_STG
50
50
5
100
150
150, -55 ~ 150
Unit
V
V
V
mA
mW
℃
ABSOLUTE MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS at Ta = 25°C
Parameter
Symbol
Min.
Typ.
Max. _{Unit Test Conditions}
Collector-base breakdown voltage
V_(BR)CBO
50
-
Collector-emitter breakdown voltage
V_(BR)CEO
50
-
-
I_C= 50A
V
-
I_C= 1mA
Emitter-base breakdown voltage
V_(BR)EBO
5
-
-
V I_E= 50A
Collector cut-off current
I_CBO
-
-
0.5
A V_CB= 50V
Emitter cut-off current
I_EBO
-
-
0.5
A V_EB= 4V
Collector-emitter saturation voltage
V_CE(sat)
-
-
0.3
V I_C= 5mA, I_B= 0.25mA
DC current transfer ratio
h_FE
100
-
600
V_CE= 5V, I_C= 1mA
Input resistance
R₁
3.29
4.7
6.11
K
Transition frequency
f_T
-
250
-
MHz
V_CE= 10V, I_E= -5mA,
f=100MHz
http://www.SeCoSGmbH.com/
30-Jun-2010 Rev. A
Any changes of specification will not be informed individually.
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