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TF201S Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – Voltage 100V ~ 1000V 2.0 Amp Surface Mount Bridge Rectifiers
Elektronische Bauelemente
TF201S ~ TF210S
Voltage 100V ~ 1000V
2.0 Amp Surface Mount Bridge Rectifiers
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
TFS
High surge current capability
Saves space on printed circuit boards
Glass passivated structure
MECHANICAL DATA
Terminals: Solderable per MIL-STD-750, Method 2026
Case: TFS
Mounting position: Any
PACKAGE INFORMATION
Package
MPQ
TFS
5K
Leader Size
13 inch
MARKING
Part Number
TF201S
TF202S
TF204S
Marking
ABS201
ABS202
ABS204
Part Number
TF206S
TF208S
TF210S
Marking
ABS206
ABS208
ABS210
Millimeter
Min. Max.
REF.
Millimeter
Min. Max.
A
4.9
5.2
F
0.2 TYP.
B
4.2
4.5
G
0.1TYP.
C
0.5
0.7
H
6.0
6.4
D
3.8
4.2
I
0.15 0.22
E
1.3
1.5
J
0.95TYP.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Rating 25°C ambient temperature unless otherwise s pecified. Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, de-rate current by 20%.)
Parameter
Symbol
TF
201S
TF
202S
Part Number
TF
TF
TF
204S 206S 208S
Maximum Recurrent Peak Reverse Voltage
VRRM
100 200 400 600 800
Maximum RMS Voltage
VRMS
70 140 280 420 560
Maximum DC Blocking Voltage
VDC
100 200 400 600 800
Maximum Average Forward Current @TL=110°C
IF(AV)
2
Peak Forward Surge Current 8.3 ms Single Half
Sine-Wave Superimposed on Rated Load (JEDEC
IFSM
50
Method)
Maximum instantaneous forward voltage @ IF=1A
VF
1
Maximum DC Reverse Current at TA=25°C
5
Rated DC Blocking Voltage
TA=125°C
IR
500
Typical junction capacitance 1
CJ
25
Thermal resistance junction to ambient 2
RθJA
80
Thermal resistance junction to lead 2
RθJL
16
Operating and Storage Temperature range
TJ, TSTG
Note:
1. Measured at 1MHz and applied reverse voltage of 4 V D.C.
2. Mounted on glass epoxy PC board with 4×2.54mm2 copper pad.
-55~150
TF
210S
1000
700
1000
Unit
V
V
V
A
A
V
µA
pF
°C/W
°C/W
°C
http://www.SeCoSGmbH.com/
20-Jul-2015 Rev. A
Any changes of specification will not be informed individually.
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