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SZD772 Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – PNP Epitaxial Planar Transistors
Elektronische Bauelemente
SZD772
PNP
Epitaxial Planar Transistors
RoHS Compliant Product
A suffix of “-C” specifies halogen-free
DESCRIPTION
The SZD772 is signed for using in output stage of 10W
amplifier, voltage regulator, DC-DC converter and relay driver.
MARKING
772
Date Code
CLASSIFICATION OF hFE (2)
Product-Rank SZD772-Q SZD772-P
Range
100~200
160~320
SZD772-E
250~500
TO-251
A
B
C
D
GE
K
H
F
M
J
P
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
2.20 2.40
0.45 0.55
6.80 7.20
7.20 7.80
REF.
G
H
J
K
M
P
Millimeter
Min. Max.
5.40 5.80
0.90 1.50
2.30
0.60 0.90
0.50 0.70
0.45 0.60
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Total Power Dissipation(TC=25°C)
Junction & Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PD
TJ, TSTG
Ratings
-40
-30
-5
-3
-7
-0.6
10
150, -55~150
Unit
V
V
V
A
A
A
W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Collector-base breakdown voltage
V(BR)CBO
Collector-emitter breakdown voltage
V(BR)CEO
Emitter-base breakdown voltage
V(BR)EBO
Collector cut-off current
ICBO
Emitter cut-off current
IEBO
DC current gain
*hFE (1)
*hFE (2)
Collector-emitter saturation voltage
*VCE(sat)
Base-emitter saturation voltage
*VBE(sat)
Transition frequency
fT
Output Capacitance
Cob
http:/*/wPwuwls.SeeCToeSsGt:mPbHu.lcsoem/Width≦380s, Duty Cycle≦2%
Min.
-40
-30
-5
-
-
30
100
-
-
-
-
Typ.
-
-
-
-
-
-
-
-0.3
-1
80
55
Max.
-
-
-
-1
-1
-
500
-0.5
-2
-
-
Unit
Test Conditions
V IC= -100µA, IE=0
V IC= -1mA, IB=0
V IE= -10µA, IC=0
µA VCB= -30V, IE=0
µA VEB= -3V, IC=0
VCE= -2V, IC= -20mA
VCE= -2V, IC= -1A
V IC= -2A, IB= -0.2A
V IC= -2A, IB= -0.2A
MHz VCE= -5V, IC= -0.1A , f=100MHz
pF VCB= -10V, IE=0, f=1MHz
Any changes of specification will not be informed individually.
21-June-2011 Rev. A
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