SUF301AM Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – Voltage 50 ~ 600 V 3.0 Amp Surface Mount Super Fast Recovery Rectifiers

Elektronische Bauelemente
SUF301AM~SUF305AM
Voltage 50 ~ 600 V 3.0 Amp
Surface Mount Super Fast Recovery Rectifiers
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Low profile package
Glass Passivated Chip Juntion
Low reverse current
Lead free in comply with EU RoHS 2011/65/EU directives
MECHANICAL DATA
Case : SMAM
Terminals: Solderable per MIL-STD-750, Method 2026
Weight: 27 mgram (Approximate)
SMAM
MARKING
Part Number
SUF301AM
SUF302AM
SUF303AM
Marking Code
ES3A
ES3B
ES3D
PACKAGE INFORMATION
Package
MPQ
SMAM
3K
Part Number
SUF304AM
SUF305AM
Marking Code
ES3G
ES3J
Leader Size
7 inch
REF.
A
B
C
Millimeter
Min. Max.
3.30 3.70
2.40 2.70
4.40 4.90
REF.
D
E
F
Millimeter
Min. Max.
0.80 1.20
1.30 1.60
0.90 1.10
ABSOLUTE MAXIMUM RATINGS
(Rating 25°C ambient temperature unless otherwise s pecified. Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, de-rate current by 20%.)
Parameter
Symbol
SUF301AM
Part Number
SUF302AM SUF303AM SUF304AM
SUF305AM
Unit
Maximum Repetitive Peak Reverse Voltage
VRRM
50
Maximum RMS Voltage
VRMS
35
Maximum DC Blocking Voltage
VDC
50
Maximum Average Forward Rectified
Current
IF
Peak Forward Surge Current, 8.3ms single
half sine-wave superimposed on rated load
IFSM
Maximum Instantaneous Forward Voltage
IF=3A @ 25°C
VF
Maximum DC Reverse Current ^TA=25°C
at Rated DC Blocking Voltage _TA=125°C
IR
Maximum Reverse Recovery Time ¹
TRR
Typical Junction Capacitance³
CJ
Typical Thermal Resistance ²
RθJL
Typical Thermal Resistance ²
RθJC
100
200
400
600
V
70
140
280
420
V
100
200
400
600
V
3
A
100
A
1
1.25
1.7
V
5
µA
200
35
nS
45
pF
22
°C/W
30
°C/W
Operating & Storage Temperature
TJ,TSTG
-55~ 150
°C
Notes:
1. Measured with IF=0.5A,IR=1A,IRR=0.25A
2. P.C.B. mounted with10 X 10 x 0.2 mm copper pad areas.
3. VR=4V, f=1MHz
http://www.SeCoSGmbH.com/
17-Apr-2015 Rev. A
Any changes of specification will not be informed individually.
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