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| STT8205S_11 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Power MOSFET | |||
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Elektronische Bauelemente
STT8205S
6A, 20V, RDS(ON) 28mï
N-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of â-Câ specifies halogen & lead-free
DESCRIPTION
The STT8205S provide the designer with best
combination of fast switching, low on-resistance and
cost-effectiveness. The TSOP-6 package is universally
used for all commercial-industrial surface mount applications.
TSOP-6
A
E
L
6
5
4
FEATURES
ï¬ Low on-resistance
ï¬ Capable of 2.5V gate drive
ï¬ Low drive current
B
1
2
3
F
C
H
DG
K
J
MARKING CODE
8205S
ï£ï£ï£ï£ï
ï½ï
ï£ = Date Code
PACKAGE INFORMATION
Package
MPQ
TSOP-6
3K
LeaderSize
7â inch
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.60 3.00
1.40 1.80
1.10 MAX.
1.90 REF.
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0 0.10
0.60 REF.
0.12 REF.
0°
10°
0.95 REF.
G
D
S
S
G
D
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Symbol
VDS
Ratings
20
Gate-Source Voltage
VGS
±10
Continuous Drain Current 3
VGS=4.5V, TA = 25°C
ID
6
VGS=4.5V, TA = 70°C
4.8
Pulsed Drain Current 1
IDM
20
Power Dissipation
Maximum Junction to Ambient 3
PD
RθJA
1.14
110
Linear Derating Factor
0.01
Operating Junction & Storage Temperature Range
TJ, TSTG
-55~150
Unit
V
V
A
A
W
°C / W
W / °C
°C
http://www.SeCoSGmbH.com/
09-Mar-2011 Rev. B
Any changes of specification will not be informed individually.
Page 1 of 4
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