STT6602 Datasheet, PDF (1/7 Pages) SeCoS Halbleitertechnologie GmbH – N-Ch: 3.3A, 30V, RDS(ON) 65 m
P-Ch: -2.3A, -30V, RDS(ON) 120 m
N & P-Channel Enhancement Mode Mos.FET

Elektronische Bauelemente
STT6602
N-Ch: 3.3A, 30V, R_DS(ON) 65 mΩ
P-Ch: -2.3A, -30V, R_DS(ON) 120 mΩ
N & P-Channel Enhancement Mode Mos.FET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
The STT6602 uses advanced trench technology to
provide excellent on-resistance and low gate charge.
The complementary MOSFETs form a high-speed
power inverter, suitable for a multitude of applications.
The TSOP-6 package is universally used for all
commercial-industrial surface mount applications.
FEATURES
Low Gate Change
Low On-resistance
MARKING
6602
Date Code
PACKAGE INFORMATION
Package
MPQ
TSOP-6
3K
Leader Size
7 inch
TSOP-6
A
E
L
654
B
123
F
C
H
DG
K
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.60 3.00
1.40 1.80
1.10 MAX.
1.90 REF.
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0 0.10
0.60 REF.
0.12 REF.
0° 10°
0.95 REF.
TOP VIEW
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Ratings
N-Channel
P-Channel
Drain-Source Voltage
VDS
30
-30
Gate-Source Voltage
Continuous Drain Current ²
Pulsed Drain Current ¹
Power Dissipation @TA=25°C
Linear Derating Factor
VGS
TA=25°C
ID
TA=70°C
IDM
PD
±20
±20
3.3
-2.3
2.6
-1.8
10
-10
1.14
0.01
Operating Junction and Storage Temperature Range
TJ, TSTG
-55~150
Thermal Resistance Rating
Maximum Junction to Ambient ²
R_θJA
110
Notes:
1. Pulse width limited by Max. junction temperature.
2. Surface mounted on 1 in² copper pad of FR4 board, t≦5sec; 180°C / W when mounted on Min. copper pad.
Unit
V
V
A
A
W
W / °C
°C
°C / W
http://www.SeCoSGmbH.com/
15-Aug-2011 Rev. A
Any changes of specification will not be informed individually.
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