STT6405 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – P-Channel Enhancement Mode Mos.FET

Elektronische Bauelemente
STT6405
-5.0 A, -30 V, R_DS(ON) 50 mΩ
P-Channel Enhancement Mode Mos.FET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
The STT6405 uses advanced trench technology to provide excellent on-resistance with low gate change. The device is
suitable for use as a load switch or in PWM applications.
FEATURES
z N-Channel
z Lower Gate Charge
z Small Footprint & Low Profile Package
PACKAGE DIMENSIONS
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ=150℃)
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Parameter
Thermal Resistance- Junction to Ambient³ _Max.
REF.
A
A1
A2
c
D
E
E1
Millimeter
Min. Max.
1.10 Max
0
0.10
0.70
1.00
0.12 Ref
2.70
3.10
2.60
3.00
1.40
1.80
REF.
L
L1
b
e
e1
Millimeter
Min. Max.
0.45 Ref
0.60 Ref
0°
10°
0.30
0.50
0.95 Ref
1.90 Ref
Symbol
V_DS
V_GS
I_D @TA=25℃
I_D @TA=70℃
I_DM
P_D @TA=25℃
Tj, Tstg
Ratings
-30
±12
-5.0
-4.2
-20
2
0.016
-55 ~ +150
Unit
V
V
A
A
W
W/℃
℃
Symbol
RθJA
Ratings
62.5
Unit
℃/W
01-June-2005 Rev. A
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