STT4443 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – -2.3A , -30V , RDS(ON) 120 m P-Channel Enhancement Mode MOSFET

Elektronische Bauelemente
STT4443
-2.3A , -30V , R_DS(ON) 120 m
P-Channel Enhancement Mode MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
STT4443 utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device. The TSOP-6
package is universally used for all commercial-industrial
applications.
FEATURES
 Simple Drive Requirement
 Smaller Outline Package
 Surface mount package
TSOP-6
A
E
L
6
5
4
B
1
2
3
F
C
H
DG
K
J
MARKING
4443
 Date Code
PACKAGE INFORMATION
Package
MPQ
TSOP-6
3K
Leader Size
7 inch
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.60 3.00
1.40 1.80
1.10 MAX.
1.90 REF.
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0 0.10
0.60 REF.
0.12 REF.
0°
10°
0.95 REF.
TOP VIEW
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current ³
Pulsed Drain Current ¹
T_A=25°C
I_D
T_A=70°C
I_DM
Power Dissipation
T_A=25°C
P_D
Linear Derating Factor
Operating Junction and Storage Temperature Range
T_j, T_stg
Maximum Junction to Ambient ³
Thermal Resistance Rating
R_JA
Ratings
-30
±20
-2.3
-1.8
-10
1.14
0.01
-55~150
110
Unit
V
V
A
A
W
W / °C
°C
°C / W
http://www.SeCoSGmbH.com/
02-Dec-2011 Rev. B
Any changes of specification will not be informed individually.
Page 1 of 4