STT3998N Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – Dual N-Ch Enhancement Mode Mos.FET

Elektronische Bauelemente
STT3998N
Dual N-Ch Enhancement Mode Mos.FET
3.7 A, 20 V, R_DS(ON) 58 m
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell density
trench process to provide low R_DS(on) and to ensure minimal power
loss and heat dissipation. Typical applications are DC-DC converters
and power management in portable and battery-powered products
such as computers, printers, PCMCIA cards, cellular and cordless
telephones.
FEATURES
 Low R_DS(on) provide higher efficiency and extends battery
life.
 Low thermal impedance copper leadframe TSOP-6 saves
board space.
 Fast switching speed.
 High performance trench technology.
PRODUCT SUMMARY
PRODUCT SUMMARY
V_DS(V)
20
R_DS(on) (m
58@V_GS= 4.5V
82@V_GS= 2.5V
I_D(A)
3.7
3.1
TSOP-6
A
E
L
6
5
4
B
1
2
3
F
C
H
DG
K
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.60 3.00
1.40 1.80
1.10 MAX.
1.90 REF.
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0 0.10
0.60 REF.
0.12 REF.
0° 10°
0.95 REF.
G
D
S
S
G
D
ABSOLUTE MAXIMUM RATINGS(T_A=25°C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current ^a
Pulsed Drain Current ^b
Continuous Source Current (Diode Conduction) ^a
Power Dissipation ^a
Operating Junction and Storage Temperature Range
T_A= 25°C
T_A= 70°C
T_A= 25°C
T_A= 70°C
Symbol
V_DS
V_GS
I_D
I_DM
I_S
P_D
Tj, Tstg
Ratings
Maximum
20
±12
3.7
2.9
8
1.05
1.15
0.7
-55 ~ 150
Unit
V
V
A
A
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction to Ambient ^a
Notes
t ≦ 10 sec
Steady State
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
27-Aug-2010 Rev. A
Symbol
R_JA
Typ. Max.
93
110
130
150
Unit
°C / W
Any changes of specification will not be informed individually.
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