STT3981_10 Datasheet, PDF (1/5 Pages) SeCoS Halbleitertechnologie GmbH – P-Channel Enhancement Mode Mos.FET

Elektronische Bauelemente
STT3981
-1.6 A, -20 V, RDS(ON) 180 mΩ
P-Channel Enhancement Mode Mos.FET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
The STT3981 utilized advance processing techniques to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device. The STT3981 is universally used for all commercial-industrial applications.
FEATURES
z Low On-Resistance
z Low Gate Charge
PACKAGE DIMENSIONS
REF.
A
A1
A2
c
D
E
E1
Millimeter
Min. Max.
1.10 Max
0
0.10
0.70
1.00
0.12 Ref
2.70
3.10
2.60
3.00
1.40
1.80
REF.
L
L1
b
e
e1
Millimeter
Min. Max.
0.45 Ref
0.60 Ref
0°
10°
0.30
0.50
0.95 Ref
1.90 Ref
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Pulsed Drain Current¹
Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
V_DS
V_GS
I_D @T_A=25℃
I_D @T_A=70℃
I_DM
P_D @T_A=25℃
T_J, T_STG
THERMAL DATA
Parameter
Thermal Resistance Junction-ambient³ (Max)
Symbol
R_θJA
Ratings
-20
±8
-1.6
-1.3
-8
0.8
0.006
-55 ~ +150
Ratings
150
Unit
V
V
A
A
W
W/℃
℃
Unit
℃/W
10-Feb-2010 Rev. C
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