STT3962NE Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – 2.3A , 60V , RDS(ON) 0.153
N-Channel Enhancement Mode MOSFET

Elektronische Bauelemente
STT3962NE
2.3A , 60V , R_DS(ON) 0.153 Ω
N-Channel Enhancement Mode MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high
cell density trench process to provide low R_DS(on) and to
ensure minimal power loss and heat dissipation.
FEATURES
Low R_DS(on) provides higher efficiency and extends
battery life
Low thermal impedance copper leadframe TSOP-6
saves board space
Fast switching speed
High performance trench technology
APPLICATION
DC-DC converters and power management in portable
and battery-powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
PACKAGE INFORMATION
Package
MPQ
TSOP-6
3K
Leader Size
7 inch
TSOP-6
A
E
L
654
B
123
F
C
H
DG
K
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.60 3.00
1.40 1.80
1.10 MAX.
1.90 REF.
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0 0.10
0.60 REF.
0.12 REF.
0° 10°
0.95 REF.
G1
D1
S2
ESD
S2
Protection Diode _G2
D2
2KV
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current ¹
TA=25°C
TA=70°C
Pulsed Drain Current ²
Continuous Source Current (Diode Conduction) ¹
Power Dissipation ¹
TA=25°C
TA=70°C
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IS
PD
Tj, Tstg
Thermal Resistance Rating
Maximum Junction to Ambient ¹
t ≦ 10 sec
Steady State
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
R_θJA
Ratings
60
±20
2.3
1.9
8
1.05
1.15
0.7
-55~150
100
166
Unit
V
V
A
A
A
W
°C
°C / W
http://www.SeCoSGmbH.com/
4-Aug-2011 Rev. A
Any changes of specification will not be informed individually.
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