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| STT3962N Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Mos.FET | |||
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Elektronische Bauelemente
STT3962N
N-Channel Enhancement Mode Mos.FET
2.3 A, 60 V, RDS(ON) 0.153 ï
RoHS Compliant Product
A suffix of â-Câ specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize High Cell Density
process. Low RDS(on) assures minimal power loss and conserves
energy, making this device ideal for use in power management
circuitry. Typical applications are DC-DC converters, power
management in portable and battery-powered products such as
computers, printers, PCMCIA cards, cellular and cordless telephones.
TSOP-6
A
E
L
6
5
4
B
FEATURES
ï¬ Low RDS(on) provides higher efficiency and extends battery life.
ï¬ Miniature TSOP-6 surface mount package saves board space.
1
2
3
F
C
H
DG
K
J
PRODUCT SUMMARY
PRODUCT SUMMARY
VDS(V)
60
RDS(on) (ïï©
0.153@VGS= 10V
0.185@VGS= 4.5V
ID(A)
2.3
2.1
G
S
G
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.60 3.00
1.40 1.80
1.10 MAX.
1.90 REF.
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0 0.10
0.60 REF.
0.12 REF.
0° 10°
0.95 REF.
D
S
D
ABSOLUTE MAXIMUM RATINGS(TA=25°C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a
Pulsed Drain Current b
Continuous Source Current (Diode Conduction) a
Power Dissipation a
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID @TA=25â
ID @TA=70â
IDM
IS
PD @TA=25â
PD @TA=70â
Tj, Tstg
Ratings
Maximum
60
±20
2.3
1.9
8
1.05
1.15
0.7
-55 ~ 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction to Ambient a
Notes
t ⦠10 sec
Steady State
a. Surface Mounted on 1â x 1â FR4 Board.
b. Pulse width limited by maximum junction temperature.
Symbol
Rï±JA
Maximum
100
166
Unit
V
V
A
A
A
W
°C
Unit
°C / W
http://www.SeCoSGmbH.com/
20-Aug-2010 Rev. B
Any changes of specification will not be informed individually.
Page 1 of 4
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