STT3922N Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Power MOSFET

Elektronische Bauelemente
STT3922N
4.1A, 20V, R_DS(ON) 47mΩ
N-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high
cell density trench process to provide low RDS(on) and to
ensure minimal power loss and heat dissipation. Typical
applications are DC-DC converters and power
management in portable and battery-powered products
such as computers, printers, and PCMCIA cards,
cellular and cordless telephones.
FEATURES
Low on-resistance
Low drive current
Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Fast switching speed
High performance trench technology
PACKAGE INFORMATION
Package
MPQ
TSOP-6
3K
Leader Size
7 inch
TSOP-6
A
E
L
654
B
123
F
C
H
DG
K
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.60 3.00
1.40 1.80
1.10 MAX.
1.90 REF.
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0 0.10
0.60 REF.
0.12 REF.
0° 10°
0.95 REF.
G
D
S
S
G
D
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current ¹
TA= 25°C
ID
TA= 70°C
Pulsed Drain Current ²
IDM
Continuous Source Current (Diode Conduction) ¹
IS
Power Dissipation ¹
TA= 25°C
PD
TA= 70°C
Operating Junction and Storage Temperature Range
TJ, TSTG
Thermal Resistance Rating
Maximum Junction to Ambient ¹
t ≦ 10 sec
Steady State
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
RθJA
Rating
20
±8
4.1
3.3
8
1.05
1.15
0.7
-55~150
110
150
Unit
V
V
A
A
A
W
°C
°C / W
http://www.SeCoSGmbH.com/
22-Jun-2012 Rev. A
Any changes of specification will not be informed individually.
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