STT3808NE Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Mos.FET

Elektronische Bauelemente
STT3808NE
6A , 20V , R_DS(ON) 20 mΩ
N-Channel Enhancement Mode Mos.FET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
Key Features:
Low rDS(on) trench technology
Low thermal impedance
Fast switching speed
Typical Applications:
Battery Powered Instruments
Portable Computing
Mobile Phones
Fast switch
GPS Units and Media Players
TSOP-6
A
E
L
654
B
123
F
C
H
DG
K
J
PACKAGE INFORMATION
Package
MPQ
TSOP-6
3K
Leader Size
7 inch
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.60 3.00
1.40 1.80
1.10 MAX.
1.90 REF.
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0 0.10
0.60 REF.
0.12 REF.
0° 10°
0.95 REF.
G1
D1
S2
S2
ESD
Protection Diode _G2
D2
2KV
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current ¹
TA= 25°C
ID
TA= 100°C
Pulsed Drain Current ²
IDM
Continuous Source Current (Diode Conduction) ¹
IS
Power Dissipation ¹
TA= 25°C
PD
TA= 100°C
Operating Junction and Storage Temperature Range
TJ, TSTG
Thermal Resistance Ratings
Maximum Junction to Ambient ¹
t≦10 sec
Steady State
Notes
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
RθJA
Ratings
20
±8
6
3.6
22
1
0.83
0.3
-55 ~ 150
110
150
Unit
V
V
A
A
A
W
°C
°C / W
http://www.SeCoSGmbH.com/
18-Oct-2013 Rev. A
Any changes of specification will not be informed individually.
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