STT3585_12 Datasheet, PDF (1/7 Pages) SeCoS Halbleitertechnologie GmbH – 3.5A, 20V, RDS(ON) 75m -2.5A, -20V, RDS(ON) 160m N And P-Channel Enhancement Mode Power MOSFET

Elektronische Bauelemente
STT3585
3.5A, 20V, R_DS(ON) 75m
-2.5A, -20V, R_DS(ON) 160m
N And P-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The STT3585 provide the designer with best combination
of fast switching, low on-resistance and cost effectiveness.
The TSOP-6 package is universally used for all
commercial-industrial surface mount applications.
TSOP-6
A
E
L
6
5
4
FEATURES
 Low Gate Charge
 Low On-resistance
MARKING CODE
B
1
2
3
F
C
H
DG
K
J
3585


 = Date Code
PACKAGE INFORMATION
Package
MPQ
TSOP-6
3K
Leader Size
7 inch
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.60 3.00
1.40 1.80
1.10 MAX.
1.90 REF.
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0 0.10
0.60 REF.
0.12 REF.
0°
10°
0.95 REF.
TOP VIEW
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
N-Channel P-Channel
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current ³
Pulsed Drain Current ¹
Power Dissipation
Maximum Junction to Ambient ³
T_A = 25°C
T_A = 70°C
V_DS
V_GS
I_D
I_DM
P_D
R_θJA
20
-20
±12
±12
3.5
-2.5
2.8
-1.97
10
-10
1.14
110
Linear Derating Factor
0.01
Operating Junction & Storage Temperature Range
T_J, T_STG
-55~150
Unit
V
V
A
A
W
°C / W
W / °C
°C
http://www.SeCoSGmbH.com/
03-Jan-2012 Rev. C
Any changes of specification will not be informed individually.
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