STT3524C Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – N & P-Channel Enhancement Mode Mos.FET

Elektronische Bauelemente
STT3524C
N-Ch: 4.1 A, 20 V, R_DS(ON) 47 mΩ
P-Ch: -3.2 A, -20 V, R_DS(ON) 79 mΩ
N & P-Channel Enhancement Mode Mos.FET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize high cell density
process. Low R_DS(on) assures minimal power loss and conserves
energy, making this device ideal for use in power management
circuitry. Typical applications are DC-DC converters, power
management in portable and battery-powered products such
as computers, printers, PCMCIA cards, cellular and cordless
telephones.
FEATURES
Low R_DS(on) Provides Higher Efficiency And Extends
Battery Life.
Miniature TSOP-6 Surface Mount Package Saves
Board Space.
PACKAGE INFORMATION
Package
MPQ
TSOP-6
3K
Leader Size
7’ inch
TSOP-6
A
E
L
654
B
123
F
C
H
DG
K
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.60 3.00
1.40 1.80
1.10 MAX.
1.90 REF.
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0 0.10
0.60 REF.
0.12 REF.
0° 10°
0.95 REF.
Top View
ABSOLUTE MAXIMUM RATINGS(T_A=25℃ UNLESS OTHERWISE NOTED)
Parameter
Symbol
Ratings
Unit
N-Channel P-Channel
Drain-Source Voltage
VDS
20
-20
V
Gate-Source Voltage
VGS
±8
V
Continuous Drain Current ¹
TA=25°C
TA=70°C
Pulsed Drain Current ²
Continuous Source Current (Diode Conduction) ¹
Power Dissipation ¹
TA=25°C
TA=70°C
4.1
-3.2
ID
A
3.3
-2.6
IDM
8
-8
A
IS
1.05
-1.05
A
1.15
PD
W
0.7
Operating Junction and Storage Temperature Range
TJ, TSTG
-55 ~ 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
N-Channel
Typ.
Max.
P-Channel
Typ. Max.
Unit
Maximum Junction to Ambient ¹
t ≦ 10 sec
Steady State
Notes:
1 Surface Mounted on 1” x 1” FR4 Board.
2 Pulse width limited by maximum junction temperature.
RθJA
93
110
93
110
°C / W
130
150
130
150
http://www.SeCoSGmbH.com/
23-Jan-2014 Rev. A
Any changes of specification will not be informed individually.
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