STT3520C Datasheet, PDF (1/7 Pages) SeCoS Halbleitertechnologie GmbH – N & P-Channel Enhancement Mode Mos.FET

Elektronische Bauelemente
STT3520C
N-Ch: 3.7 A, 23 V, R_DS(ON) 58 m
P-Ch: -2.7 A, -23 V, R_DS(ON) 112 m
N & P-Channel Enhancement Mode Mos.FET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize high cell density
process. Low R_DS(on) assures minimal power loss and conserves
energy, making this device ideal for use in power management
circuitry. Typical applications are DC-DC converters, power
management in portable and battery-powered products such
as computers, printers, PCMCIA cards, cellular and cordless
telephones.
FEATURES
 Low R_DS(on) Provides Higher Efficiency And Extends
Battery Life.
 Miniature TSOP-6 Surface Mount Package Saves
Board Space.
PACKAGE INFORMATION
Package
MPQ
TSOP-6
3K
LeaderSize
7’ inch
TSOP-6
A
E
L
B
F
C
H
DG
K
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.60 3.00
1.40 1.80
1.10 MAX.
1.90 REF.
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0 0.10
0.60 REF.
0.12 REF.
0° 10°
0.95 REF.
G1 ₁
S2 2
G2 3
6 D1
5 S1
4 _D2
ABSOLUTE MAXIMUM RATINGS(T_A=25℃ UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current ¹
Pulsed Drain Current ²
Continuous Source Current (Diode Conduction) ¹
Power Dissipation ¹
Operating Junction and Storage Temperature Range
Symbol
V_DS
V_GS
I_D @TA=25℃
I_D @TA=70℃
I_DM
I_S
P_D @TA=25℃
P_D @TA=70℃
Tj, Tstg
Ratings
N-Channel
P-Channel
23
-23
±12
±12
3.7
-2.7
2.9
-2.1
8
-8
1.05
-1.05
1.15
0.7
-55 ~ +150
Unit
V
V
A
A
A
W
℃
http://www.SeCoSGmbH.com/
02-Dec-2010 Rev. A
Any changes of specification will not be informed individually.
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