STT3490N Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Mos.FET

Elektronische Bauelemente
STT3490N
N-Channel Enhancement Mode Mos.FET
1.2 A, 150 V, R_DS(ON) 700 m
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
KEY FEATURES
 Low R_DS(on) trench technology.
 Low thermal impedance.
 Fast switching speed.
TYPICAL APPLICATIONS
 White LED boost converters.
 Automotive Systems
 Industrial DC/DC Conversion Circuits
PRODUCT SUMMARY
PRODUCT SUMMARY
V_DS(V)
150
R_DS(on) (m
700@V_GS= 10V
1200@V_GS= 4.5V
I_D(A)
1.2
1
D
D
D
D
G
S
TSOP-6
A
E
L
6
5
4
B
1
2
3
F
C
H
DG
K
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.60 3.00
1.40 1.80
1.10 MAX.
1.90 REF.
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0 0.10
0.60 REF.
0.12 REF.
0° 10°
0.95 REF.
ABSOLUTE MAXIMUM RATINGS(T_A=25°C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current ^a
Pulsed Drain Current ^b
Continuous Source Current (Diode Conduction) ^a
Power Dissipation ^a
Operating Junction and Storage Temperature Range
T_A= 25°C
T_A= 70°C
T_A= 25°C
T_A= 70°C
Symbol
V_DS
V_GS
I_D
I_DM
I_S
P_D
Tj, Tstg
Ratings
Maximum
150
±20
1.2
1
±10
2.5
2
1.3
-55 ~ 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction to Ambient ^a
Notes
t ≦ 10 sec
Steady State
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature.
Symbol
R_JA
Maximum
62.5
110
Unit
V
V
A
A
A
W
°C
Unit
°C / W
http://www.SeCoSGmbH.com/
25-Aug-2010 Rev. B
Any changes of specification will not be informed individually.
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