STT3458N_12 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – 3.4A , 60V , RDS(ON) 92 m N-Channel Enhancement Mode Mos.FET

Elektronische Bauelemente
STT3458N
3.4A , 60V , R_DS(ON) 92 m
N-Channel Enhancement Mode Mos.FET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize
High Cell Density process. Low R_DS(on) assures minimal
power loss and conserves energy, making this device
ideal for use in power management circuitry.
FEATURES
 Low R_DS(on) provides higher efficiency and extends
battery life.
 Low gate charge
 Fast switch
 Miniature TSOP-6 surface mount package
saves board space
APPLICATION
Power switch, power management in portable
and battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless telephones.
TSOP-6
A
E
L
6
5
4
B
1
2
3
F
C
H
DG
K
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.60 3.00
1.40 1.80
1.10 MAX.
1.90 REF.
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0 0.10
0.60 REF.
0.12 REF.
0° 10°
0.95 REF.
PACKAGE INFORMATION
Package
MPQ
TSOP-6
3K
Leader Size
7 inch
D
D
D
D
G
S
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
Continuous Drain Current ¹
Pulsed Drain Current ²
Continuous Source Current (Diode Conduction) ¹
Power Dissipation ¹
Operating Junction and Storage Temperature Range
T_A= 25°C
T_A= 70°C
T_A= 25°C
T_A= 70°C
V_GS
I_D
I_DM
I_S
P_D
T_J, T_STG
Thermal Resistance Ratings
Maximum Junction to Ambient ¹
t≦5 sec
Steady State
Notes
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
R_θJA
Ratings
60
±20
3.4
2.7
±15
1.7
2
1.3
-55 ~ 150
62.5
110
Unit
V
V
A
A
A
W
°C
°C / W
http://www.SeCoSGmbH.com/
05-Mar-2012 Rev. B
Any changes of specification will not be informed individually.
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