STT3455 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – P-Channel Enhancement Mode Power Mos.FET

Elektronische Bauelemente
STT3455
-4.0A, -30V,RDS(ON) 100m
P-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
Description
The STT3455 utiltzed advance processing techniques to achieve the lowest
possible on-resistance, extermely efficient and cost-effectiveness device.
The STT3455 is universally used for all commercial-industrial applications.
Features
* Fast Switching Characteristic
* Lower Gate Charge
* Small Footprint & Low Profile Package
D
G
Date Code
D
D
S
6
5
4
3455
S
1
2
3
D
D
G
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current ³
Continuous Drain Current ³
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbo l
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
Tj, Tstg
REF.
A
A1
A2
c
D
E
E1
Millimeter
Min. Max.
1.10 MAX.
0 0.10
0.70 1.00
0.12 REF.
2.70 3.10
2.60 3.00
1.40 1.80
REF.
L
L1
b
e
e1
Millimeter
Min. Max.
0.45 REF.
0.60 REF.
0°
10°
0.30 0.50
0.95 REF.
1.90 REF.
Ratings
-30
±20
-4.0
-3.3
-20
2.0
0.016
-55~+150
Unit
V
V
A
A
A
W
W / ^oC
o_C
Thermal Data
Parameter
Thermal Resistance Junction-ambient³
Symbol
Rthj-a
Ratings
62.5
Unit
o_{C /W}
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of 4