STT3434 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Power Mos.FET

Elektronische Bauelemente
STT3434
6.1 A, 30 V, RDS(ON) 34 mΩ
N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
The STT3434 uses advanced trench technology to provide excellent on-resistance and low gate charge.
The TSOP-6 package is universally used for all commercial-industrial surface mount applications.
APPLICATIONS
z Low on-resistance
z Capable of 2.5V gate drive
PACKAGE DIMENSIONS
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Pulsed Drain Current¹
Power Dissipation
Linear Derating Factor
Thermal Resistance Junction-ambient³
Max.
Operating Junction and Storage Temperature Range
REF.
A
A1
A2
c
D
E
E1
Millimeter
Min. Max.
1.10 Max
0
0.10
0.70
1.00
0.12 Ref
2.70
3.10
2.60
3.00
1.40
1.80
REF.
L
L1
θ
b
e
e1
Millimeter
Min. Max.
0.45 Ref
0.60 Ref
0°
10°
0.30
0.50
0.95 Ref
1.90 Ref
Symbol
V_DS
V_GS
V_GS@ 4.5V, I_D @TA=25℃
V_GS@ 4.5V, I_D @TA=70℃
I_DM
P_D @TA=25℃
RθJA
Tj, Tstg
Ratings
30
±12
6.1
4.9
30
1.14
0.01
110
-55 ~ +150
Unit
V
V
A
A
W
W/℃
℃/W
℃
01-June-2005 Rev. A
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