STT3423P Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – P-Channel Enhancement Mode Mos.FET

Elektronische Bauelemente
STT3423P
-5.7 A, -20 V, R_DS(ON) 42 m
P-Channel Enhancement Mode Mos.FET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell density
trench process to provide low R_DS(on) and to ensure minimal power
loss and heat dissipation. Typical applications are DC-DC converters
and power management in portable and battery-powered products
such as computers, printers, PCMCIA cards, cellular and cordless
telephones.
FEATURES
 Low R_DS(on) provides higher efficiency and extends battery life.
 Low thermal impedance copper leadframe TSOP-6 saves board space.
 Fast switching speed.
 High performance trench technology.
PRODUCT SUMMARY
PRODUCT SUMMARY
V_DS(V)
-20
R_DS(on) (m
42@V_GS= -4.5V
57@V_GS= -2.5V
80@V_GS= -1.8V
I_D(A)
-5.7
-4.9
-4.1
TSOP-6
A
E
L
B
F
C
H
DG
K
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.60 3.00
1.40 1.80
1.10 MAX.
1.90 REF.
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0 0.10
0.60 REF.
0.12 REF.
0° 10°
0.95 REF.

Drain
65 4

Gate

123

Source
ABSOLUTE MAXIMUM RATINGS(T_A=25°C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current ^a
Pulsed Drain Current ^b
Continuous Source Current (Diode Conduction) ^a
Power Dissipation ^a
Operating Junction and Storage Temperature Range
Symbol
V_DS
V_GS
I_D @TA=25℃
I_D @TA=70℃
I_DM
I_S
P_D @TA=25℃
P_D @TA=70℃
Tj, Tstg
Ratings
Maximum
-20
±8
-5.7
-4.7
±20
-1.7
2.0
1.3
-55 ~ 150
Unit
V
V
A
A
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction to Ambient ^a
Notes
t ≦ 5 sec
Steady State
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature.
R_JA
Maximum
50
90
Unit
°C / W
http://www.SeCoSGmbH.com/
23-Jul-2010 Rev. A
Any changes of specification will not be informed individually.
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