STT3405P Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – P-Channel Enhancement Mode MOSFET

Elektronische Bauelemente
STT3405P
-4.9 A, -20 V, R_DS(ON) 56 m
P-Channel Enhancement Mode MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize
a high cell density process. Low R_DS(on) assures minimal
power loss and conserves energy, making this device
ideal for use in power management circuitry. Typical
applications are PWMDC-DC converters, power management
in portable and battery-powered products such as computers,
printers, battery charger, telecommunication power system,
and telephones power system.
FEATURES
 Low R_DS(on) provides higher efficiency and extends
battery life.
 Miniature TSOP-6 surface mount package saves
board space.
 High power and current handling capability.
PACKAGE INFORMATION
Package
MPQ
TSOP-6
3K
LeaderSize
7’ inch
TSOP-6
A
E
L
6
5
4
B
1
2
3
F
C
H
DG
K
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.60 3.00
1.40 1.80
1.10 MAX.
1.90 REF.
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0 0.10
0.60 REF.
0.12 REF.
0° 10°
0.95 REF.
D
D
D
D
G
S
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current ¹
Pulsed Drain Current ²
Continuous Source Current (Diode Conduction) ¹
T_A= 25°C
T_A= 70°C
Power Dissipation ¹
T_A= 25°C
T_A= 70°C
Operating Junction and Storage Temperature Range
V_DS
V_GS
I_D
I_DM
I_S
P_D
Tj, Tstg
Thermal Resistance Ratings
Maximum Junction to Ambient ¹
t ≦ 5 sec
R_JA
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
Ratings
-20
±12
-4.9
-4.0
-20
-1.7
2
1.3
-55 ~ 150
62.5
110
Unit
V
V
A
A
A
W
°C
°C / W
http://www.SeCoSGmbH.com/
06-Jan-2011 Rev. A
Any changes of specification will not be informed individually.
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