STT3402N Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Mos.FET

Elektronische Bauelemente
STT3402N
6.3 A, 30 V, R_DS(ON) 27 m
N-Channel Enhancement Mode Mos.FET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize High Cell Density
process. Low R_DS(on) assures minimal power loss and conserves energy,
making this device ideal for use in power management circuitry. Typical
applications are power switch, power management in portable and
battery-powered products such as computers, printers, PCMCIA cards,
cellular and cordless telephones.
TSOP-6
A
E
L
6
5
4
B
TYPICAL APPLICATIONS
 Low R_DS(on) Provides Higher Efficiency and
Extends Battery Life.
 Low Gate Charge.
 Fast Switch.
 Miniature TSOP-6 Surface Mount Package
Saves Board Space.
PRODUCT SUMMARY
STT3402N
V_DS(V)
30
R_DS(on) (m
0.027@V_GS= 10V
0.035@V_GS= 4.5V
I_D(A)
6.3
5.5
PACKAGE INFORMATION
Package
MPQ
TSOP-6
3K
LeaderSize
7’ inch
1
2
3
F
C
H
DG
K
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.60 3.00
1.40 1.80
1.10 MAX.
1.90 REF.
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0 0.10
0.60 REF.
0.12 REF.
0° 10°
0.95 REF.
D
D
D
D
G
S
ABSOLUTE MAXIMUM RATINGS(T_A=25°C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current ¹
Pulsed Drain Current ²
Continuous Source Current (Diode Conduction) ¹
Power Dissipation ¹
Operating Junction and Storage Temperature Range
T_A= 25°C
T_A= 70°C
T_A= 25°C
T_A= 70°C
Symbol
V_DS
V_GS
I_D
I_DM
I_S
P_D
Tj, Tstg
Ratings
Maximum
30
±20
6.3
5.2
±20
1.3
1.6
1.0
-55 ~ 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction to Ambient ¹
Notes
t ≦ 5 sec
1 Surface Mounted on 1” x 1” FR4 Board.
2 Pulse width limited by maximum junction temperature.
Symbol
R_JA
Maximum
78
Unit
V
V
A
A
A
W
°C
Unit
°C / W
http://www.SeCoSGmbH.com/
19-Nov-2010 Rev. A
Any changes of specification will not be informed individually.
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