STT2622 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Power Mos.FET

Elektronische Bauelemente
STT2622
520mA, 50V,RDS(ON) 1.8
N-Channel Enhancement Mode Power Mos.FET
Description
The STT2622 utiltzed advance processing techniques to achieve the lowest
possible on-resistance, extermely efficient and cost-effectiveness device.
The SOT-26 is universally used for all commercial-industrial applications.
Features
* RoHS Compliant
* Low Gate Charge
* Surface Mount Package
D1
D2
G1
G2
S1
S2
Date Code
D1 S1 D2
6
5
4
2622
1
2
3
G1 S2
G2
REF.
A
A1
A2
c
D
E
E1
Millimeter
Min. Max.
1.10 MAX.
0 0.10
0.70 1.00
0.12 REF.
2.70 3.10
2.60 3.00
1.40 1.80
REF.
L
L1
b
e
e1
Millimeter
Min. Max.
0.45 REF.
0.60 REF.
0°
10°
0.30 0.50
0.95 REF.
1.90 REF.
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³,VGS@10V
3
Continuous Drain Current,VGS@10V
Pulsed Drain Current ¹
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID@TA=25^oC
ID@TA=70^oC
IDM
PD@TA=25^oC
Tj, Tstg
Ratings
50
±20
520
410
1.5
0.8
0.006
-55~+150
Unit
V
V
mA
mA
A
W
W /^oC
o_C
Thermal Data
Parameter
Thermal Resistance Junction-ambient³ (Max)
Symbol
Rthj-a
Ratings
150
Unit
o_{C /W}
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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